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Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C<sub>HCS</sub>/C<sub>LCS</sub>, Fast Speed, and Long Retention

DOI

38

Citations

0

References

2022

Year

Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Abstract

By introducing a heavily doped region in the metal-ferroelectric-semiconductor (MFS) structure, for the first time, we report an inversion-type ferroelectric capacitive memory (FCM) device which simultaneously achieves (1) high (×125) C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HCS</inf> /C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCS</inf> ratio, (2) 10-year retention under 85 ℃, (3) multi-state operation, and (4) improved write speed in nanosecond range. Integrating the devices on SOI substrates, we also realize the world’s first 1 kbit inversion-type FCM crossbar array and demonstrate successful read/write operation with a specially-designed array drive and test system.