2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 41 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMemoryMicroelectronicsSemiconductor DevicesFerroelectric MaterialsMemory DevicesSemiconductor ReliabilityCrossbar Array MaterialsFerroelectric SemiconductorsHigh-density Memory MaterialsMemory MaterialsNanoelectronic Memory DevicesNonvolatile Memory MaterialsRetention CharacteristicsSpeed
By introducing a heavily doped region in the metal-ferroelectric-semiconductor (MFS) structure, for the first time, we report an inversion-type ferroelectric capacitive memory (FCM) device which simultaneously achieves (1) high (×125) C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HCS</inf> /C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCS</inf> ratio, (2) 10-year retention under 85 ℃, (3) multi-state operation, and (4) improved write speed in nanosecond range. Integrating the devices on SOI substrates, we also realize the world’s first 1 kbit inversion-type FCM crossbar array and demonstrate successful read/write operation with a specially-designed array drive and test system.