Concepedia

Facet-dependent electrical conductivity properties of a 4H-SiC wafer

Gautam Kumar, Jingwei Chen, Hsueh‐Heng Ma, Xing-Fu Huang, Michael H. Huang

Journal of Materials Chemistry C · 2022 · 33 citations · 36 references

DOI

Concepts

Abstract

Electrical conductivity of a 4H-SiC wafer is facet-dependent with its {0001} face being much more conductive than its {101̄0} face, and it presents a perfect current rectification effect.

References

36

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