Light Advanced Manufacturing · 2022 · 22 citations · 24 references
White OledPhotonicsCrosstalk EffectFine-moulded Light-blocking MatrixEngineeringSolid-state LightingDisplay TechnologyMicrofabricationAdvanced Display TechnologyNew Lighting TechnologyResidual Black LbmSevere Crosstalk EffectColour-converted Micro-led DisplayMicroelectronicsOptoelectronics
One of the major challenges when fabricating high gamut colour-converted micro-light-emitting diodes (LEDs) displays is severe crosstalk effect among adjacent pixels because of the wide view-angle feature of micro-LED chips. In this study, potential factors that contribute to the crosstalk effect were systematically simulated. We observed that precisely filling the space between each micro-LED chip with a light blocking matrix (LBM) can be a promising solution to alleviate this risk. After careful investigations, a press-assisted moulding technique was demonstrated to be an effective approach of fabricating the LBM. Nevertheless, experimental observations further revealed that residual black LBM on the surface of micro-LEDs severely reduces the brightness, thereby compromising the display performance. This problem was successfully addressed by employing a plasma etching technique to efficiently extract the trapped light. Eventually, a top-emitting blue micro-LED-based backlight fine-moulded with a black LBM was developed and combined with red and green quantum dot colour-conversion layers for full-colour display. The colour gamut of our manufactured display prototype can cover as high as 122% that of the National Television Standards Committee.
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Micro-light-emitting diodes with quantum dots in display technology
Zhaojun Liu, Chun‐Ho Lin, Byung-Ryool Hyun et al. · Light Science & Applications · 2020 · 630 citations · Full text
Toward Smart and Ultra‐efficient Solid‐State Lighting
Jeffrey Y. Tsao, Mary H. Crawford, Michael E. Coltrin et al. · Advanced Optical Materials · 2014 · 366 citations
III-nitride blue microdisplays
H. X. Jiang, S. X. Jin, J. Li et al. · Applied Physics Letters · 2001 · 315 citations
Wide-bandgap Semiconductor, Engineering, Cubic Boron Nitride +17