Electrical Characteristics of In_0.53Ga_0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes

Abstract

In this article, we investigate the electrical properties of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As gate-all-around (GAA) MOSFETs with different nanowire shapes. InGaAs GAA MOSFETs with trapezoid and triangle nanowire shapes have been fabricated and characterized. Improved output performance was observed as the nanowire top width reduces from 20 to 11 nm. It was found that the electrical characteristics degraded as the nanowire top width was decreased to nearly 0 nm. To explain the carrier transport mechanism in ultralow-scale devices, TCAD simulation has been performed to study the electron density distribution for different nanowire widths and explain the transport mechanism in these ultralow-scale transistor devices.