Publication | Closed Access
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs
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Citations
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References
2015
Year
Node PmosfetsElectrical EngineeringSige LayersEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationPattern DependencySilicon On InsulatorMicroelectronicsSemiconductor Device
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