Crystallization and failure behavior of Ta-TM (TM=Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization

Diffusion of Metals in Silicon Dioxide

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Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)

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Ternary amorphous metallic thin films as diffusion barriers for Cu metallization

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Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

G. S. Chen, S. T. Chen · Journal of Applied Physics · 2000 · 72 citations

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Annealing-induced full amorphization in a multicomponent metallic film

Jinn P. Chu, C.T. Liu, T. Mahalingam et al. · Physical Review B · 2004 · 62 citations

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