A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology

Abstract

Summary form only given, as follows. The paper presents the design, implementation and measured performance of a 77 GHz heterodyne receiver MMIC realized in a new AlGaN/GaN on s.i. SiC HEMT technology with 100 nm gate length and maximum cutoff frequencies fT and fmax of 80 and 200 GHz, respectively. The compact single-chip receiver combines a four-stage low noise amplifier with a resistive down-conversion mixer and a frequency doubler stage for LO generation. At 77 GHz, it achieves a conversion gain of 11 dB.