Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APDs

Abstract

Abstract The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of 2.8 × 10−5 per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60°C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 km.