Fully Physically Transient Volatile Memristor Based on Mg/Magnesium Oxide for Biodegradable Neuromorphic Electronics

Abstract

In this article, a fully physically transient volatile memristor utilizing Mg as an active electrode with a structure of W/MgO/Mg/W was proposed. The fully transient device exhibited remarkable threshold switching (TS) performance via Mg <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> cations migration dynamics and emulated the paired-pulse facilitation (PPF), paired-pulse depression (PPD), and transition from short-term to long-term plasticity of a biological synapse successfully. In addition, a water-assisted transfer printing (WTP) method was exploited to fabricate the fully physically transient system on biodegradable and biocompatible substrates. This study confirms that the fully transient volatile memristor owns outstanding value toward security neuromorphic computing, biodegradable, and bio-integrated electronic systems.