Fabrication of Highly Photosensitive MoS₂ Photodetector Films Using Rapid Electrohydrodynamic‐Jet Printing Process

Abstract

Abstract Molybdenum disulfide (MoS 2 ) is a representative transition metal dichalcogenide (TMD) that has been extensively studied as a potential semiconducting material for next generation optoelectronic applications due to its exceptional optical, electrical, and mechanical properties. However, the lack of an efficient and scalable technique for MoS 2 film synthesis is a major drawback. Therefore, in this study, electrohydrodynamic (EHD) jet printed MoS 2 (EJP MoS 2 ) photodetectors are reported. The optoelectronic characteristics of the EJP MoS 2 photodetector are investigated using two modes: two‐terminal and three‐terminal configuration under light illumination. For the two‐terminal mode of the EJP MoS 2 photodetector, a photosensitivity of 3444% and a photoresponsivity of 1.68 A W –1 are achieved, respectively. Concurrently, the three‐terminal mode of the EJP MoS 2 photodetector exhibits an improved photosensitivity (4495%) and photoresponsivity (3.78 A W –1 ) under gate voltage. The proposed EHD jet printing method and the EJP MoS 2 based photodetector will provide a feasible solution for high performance TMDs based photonics.