Nitrogen-Passivated (010) In_0.53Ga_0.47As FinFETs With High Peak <i>g</i> _<i>m</i> and Reduced Leakage Current

Abstract

In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance, <inline-formula> <tex-math notation="LaTeX">${g}_{m}$ </tex-math></inline-formula>, of 2727 <inline-formula> <tex-math notation="LaTeX">$\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula> which is among the highest values reported for In_0.53Ga_0.47As FinFETs. In addition, subthreshold performances are improved with leakage current (<inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$1.13\times 10^{-{4}}~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, subthreshold swing (SS) of 78 mV/dec, drain-induced barrier lowering (DIBL) of 55 mV/V, and equivalent oxide thickness (EOT) &#x007E;0.8 nm. These excellent results are attributed to the strong electrostatic control and the superior high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula>/InGaAs interface quality achieved by scaled fin width and RP passivation.