Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Ee Wah Lim, Razali Ismail · Electronics · 2015 · 795 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Overview of emerging nonvolatile memory technologies

Jagan Singh Meena, Simon M. Sze, Umesh Chand et al. · Nanoscale Research Letters · 2014 · 775 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +14

XPS characterisation of in situ treated lanthanum oxide and hydroxide using tailored charge referencing and peak fitting procedures

Martin F. Sunding, Kianoosh Hadidi, Spyros Diplas et al. · Journal of Electron Spectroscopy and Related Phenomena · 2011 · 618 citations

Natural Sciences, Materials Engineering, Materials Science +15

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Nuo Xu, Lifeng Liu, Xiao Wei Sun et al. · Applied Physics Letters · 2008 · 374 citations

Engineering, Electrical Engineering, Materials Science +17

TaO x -based resistive switching memories: prospective and challenges

Amit Prakash, Debanjan Jana, S. Maikap · Nanoscale Research Letters · 2013 · 222 citations · Full text

Engineering, Materials Engineering, Materials Science +16