Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Abstract

Among the limitations known from semiconductor lasers, catastrophic optical damage (COD) is perhaps the most spectacular power‐limiting mechanism. Here, absorption and temperature build up in a positive feedback loop that eventually leads to material destruction. Thus, this is truly an ultimate mechanism, and its continued suppression is a manifestation of progress in device design and manufacturing. After an overview of the current state of knowledge, new investigations of COD using artificially micrometer‐sized starting points created within the active zone in the cavity of 450 nm GaN semiconductor lasers are reported on. Defect growth mechanisms and characteristics are studied during 800 ns current pulses. The defect growth follows the highest light intensity. Secondary defect patterns are studied: complete destruction of the active zone and generation of a point defect cloud at least ≈10 μm into the remaining surrounding material. Extremely large angles (>90°) of damage growth are traced back to the material properties and the aging scenario. The results are compared with former experiments with GaAs‐based lasers.