Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

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Engineering, Electrical Engineering, Materials Science +17

Exciton Transfer between Localized States in CdS_1–<i>x</i>Se_<i>x</i> Alloys

C. Gourdon, P. Lavallard · physica status solidi (b) · 1989 · 196 citations

Natural Sciences, Materials Science, Physics +17

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

Shuichiro Yamamoto, Yuji Zhao, Chih‐Chien Pan et al. · Applied Physics Express · 2010 · 184 citations

Engineering, Electrical Engineering, Materials Science +17

Efficient emission of InGaN-based light-emitting diodes: toward orange and red

Shengnan Zhang, Jianli Zhang, Jiang-Dong Gao et al. · Photonics Research · 2020 · 176 citations

Engineering, Electrical Engineering, Materials Science +17

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang, Jianli Zhang, Longquan Xu et al. · Photonics Research · 2019 · 173 citations

Engineering, Electrical Engineering, Materials Science +17