Advanced Functional Materials · 2021 · 41 citations · 24 references
Spin TorqueEngineeringSpin-charge ConversionSpin SystemsEmerging Memory TechnologyMagnetic ResonanceSpintronic MaterialSpin DynamicMagnetic MaterialsSpin PhenomenonMagnetismElectronic DevicesQuantum ComputingSingle Magnetic HeterojunctionQuantum MaterialsQuantum EntanglementCurrent PulsesSpin-charge-orbit ConversionElectrical EngineeringSpin-orbit EffectsPhysicsElectrical ManipulationComplete Spin LogicQuantum MagnetismSpintronicsSpin-orbit TorqueNatural SciencesMagnetic DeviceOptical Logic Gate
Abstract Fully electrical manipulation of magnetism, preferably through spin current, is highly desired to achieve energy‐efficient, nonvolatile, and programmable spin logic devices. It is demonstrated in this study that in a single Pt/IrMn/Co/Ru/CoPt heterojunction, all 16 Boolean logic functions can be realized in a purely electrical way, relying on electrical manipulation of magnetic‐field‐free spin‐orbit torque (SOT) switching. By applying current pulses along with two orthogonal directions, the exchange bias between IrMn and Co, and the SOT switching polarity (clockwise or counterclockwise) of perpendicularly magnetized CoPt, can be reversibly controlled, enabling complete spin logic within a single nonvolatile memory. This study makes a significant step towards practical electrical programmable spin logic devices.
24
Proposal for an all-spin logic device with built-in memory
Behtash Behin‐Aein, Deepanjan Datta, Sayeef Salahuddin et al. · Nature Nanotechnology · 2010 · 759 citations