Applied Physics Letters · 2021 · 13 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsOptoelectronicsSemiconductor DevicesDetector TechnologyInfrared DetectorsInfrared Optical MaterialsPhotodetectorsSemiconductor DetectorsSemiconductor PhysicsDetectorsHeterostructure DevicesInfrared PhotodetectorsMolecular Beam EpitaxyQuantum EfficiencySuperlattice GrowthSuperlattice MaterialsX-ray Diffraction Analysis
III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb–InAs strained layer superlattice, operation close to room temperature was demonstrated with cutoff wavelengths of 4.82 and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current, and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity was carried out. 1/f noise effects are considered. Results indicate that these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.
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