Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices

Takeo Oku, Masaya Taguchi, Atsushi Suzuki, Kaede Kitagawa, Yugo Asakawa, Satoshi Yoshida, Masanobu Okita, Satoshi Minami, Sakiko Fukunishi, Tomoharu Tachikawa

Coatings · 2021 · 39 citations · 61 references

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Abstract

CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.

References

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