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Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-V<sub>T</sub>, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets
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2019
Year
Low-power ElectronicsMaterials ScienceElectrical EngineeringAdvanced Low-vReduced Vertical DistanceEngineeringSemiconductor TechnologyNanosheetNanoelectronicsNanotechnologySolid State DevicesApplied PhysicsSemiconductor Device FabricationMicroelectronicsInternational ConferenceSemiconductor Device
2019 International Conference on Solid State Devices and Materials ,Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-V<sub>T</sub>, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets