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Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
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2009
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Device ModelingThreshold Voltage VariationElectrical EngineeringEngineeringNanoelectronicsElectronic EngineeringBias Temperature InstabilityApplied PhysicsNoiseGate Lengths ScaleTelegraph NoiseMicroelectronicsSemiconductor Device
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