EM simulation accuracy enhancement for broadband modeling of on-wafer passive components

Abstract

This paper describes methods for accuracy enhancement in broadband modeling of on-wafer passive components using electromagnetic (EM) simulation. It is shown that standard excitation schemes for integrated component simulation leads to poor correlation with on-wafer measurements beyond the lower GHz frequency range. We show that this is due to parasitic effects and higher-order modes caused by the excitation schemes. We propose a simple equivalent circuit for the parasitic effects in the well-known ground ring excitation scheme. An extended L-2L calibration method is shown to improve significantly the accuracy of the on-wafer component modeling, when applied to parasitic effect removal associated with the excitation schemes.