The variation of intrinsic defects in XTe (X = Ge, Sn, and Pb) induced by the energy positions of valence band maxima

Abstract

The difference of vacancy formation energy between PbTe and Ge (Sn)Te can be understood by the relative position of valence band maximum (VBM) energy levels. The higher the VBM, the lower the formation energy of acceptor defect (such as V_x).