Field Ion-Scanning Tunneling Microscopy Study of C₈₄ on the Si(100) Surface

Abstract

Initial stage and monolayer/multilayer adsorption of C 84 fullerene on the Si(100)2×1 surface was investigated by field ion-scanning tunneling microscopy. The C 84 molecules reside stably at room temperature in the trough formed by Si dimer rows. The nearest neighbour distance of the C 84 molecules is approximately 14 Å. For the first and second layers, only the disordered adsorption geometry was observed. When C 84 was deposited while keeping the substrate at 100 to 150°C, the fcc crystal formation was observed above the third layer with its lattice constant of 17.1 Å.