2020 · 39 citations · 4 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSensors3D ImagingImage ProcessingImage SensorsIntegrated PhotonicsPhotonic Integrated CircuitsQuantum Well DevicesDepth SensingDynamic RangeFull-well CapacityImage Sensor TechnologyLeakagePixel ArchitecturePower ConsumptionTime-of-flight Image Sensors
A 1280×960 floating diffusion storage global shutter image sensor is implemented in a 3D stacked back illuminated indirect time of flight sensor (iToF). The sensor, achieves 18,000e- full well capacity and 32% quantum efficiency (QE) with a pyramid surface for diffraction (PSD) structure [1], utilizing a 3.5µm pixel. Low power consumption is also achieved, due to low leakage current for the iToF pixel and low resistance Cu-Cu connection metal wiring. These device architectures enable high resolution and wide dynamic range 3D depth sensing for both near and far objects.
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Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding
Y. Kagawa, Nobutoshi Fujii, Kenichi Aoyagi et al. · 2016 · 234 citations