University of Regensburg Publication Server (University of Regensburg) · 2015 · 314 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsDopingOptical Properties Of SemiconductorsSemiconductor NanomaterialsSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsBiexciton StatesExcitonic EffectsExcitonic MaterialsExcitonsN-type DopingPhotoluminescencePhotoluminescence SpectroscopyTransition Metal Dichalcogenides
Single-layer WS$_2$ is a direct-gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature-dependent photoluminescence measurements on mechanically exfoliated single-layer WS$_2$, revealing the existence of neutral and charged excitons at low temperatures as well as at room temperature. By applying a gate voltage, we can electrically control the ratio of excitons and trions and assert a residual n-type doping of our samples. At high excitation densities and low temperatures, an additional peak at energies below the trion dominates the photoluminescence, which we identify as biexciton emission.
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