Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

Abstract

In this letter, the authors demonstrated superior electrical characteristics of a 1.2 kV SiC Schottky barrier diode-wall integrated trench MOSFET (SWITCH-MOS) with the higher Schottky barrier height of nickel. It was confirmed that a significant improvement in short-circuit capability was achieved with no sacrifice of on resistance, because the electron leakage current through the integrated Schottky barrier diode (SBD), caused by thermionic-field emission, could be successfully suppressed. Further, although the integrated SBD with nickel showed 0.25 V greater forward voltage drop than that with titanium, the on resistance and switching characteristics were similar in the two devices. The results of the study showed that the SWITCH-MOS with nickel can achieve 21.0% less power dissipation in high frequency pulse width modulation inverters, compared to standard SiC trench MOSFETs.