FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications

Abstract

FinFET with contact over active-gate (COAG) is implemented on 12nm node technology platform to optimize the Maximum Oscillation Frequency (F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> ) and the Minimum Noise Figure (NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MIN</sub> ) for devices with large fin numbers. This study shows that proposed COAG design can reduce the gate resistance of the 40-fin device by ~10-fold, while improving the F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> by ~180% with comparable reliability performance to traditional FinFETs. Excellent DC and RF performances with NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MIN</sub> of 0.6dB at 26GHz and 3dB improvement in NF with 50Ω source impedance (NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">50</sub> ) over the 5-26GHz frequency range makes large fin number COAG FinFET an excellent candidate for variety of 5G sub-6GHz and mmWave applications in which high F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> and low noise are critical.