Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene

Abstract

Turbostratic graphene disks feature multiple layers with rotational stacking order, which ensures electronic decoupling of adjacent layers. Despite there being up to 100 graphene sheets per disk, the authors find the signature of $t\phantom{\rule{0}{0ex}}w\phantom{\rule{0}{0ex}}o-d\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}l$ charge transport. With its central region well protected from environmental influence, this system combines the merits of single-layer graphene with a remarkable, consistent robustness, making it eminently suitable for device integration.