N-Type, Ion-Implanted Silicon Solar Cells and Modules

Daniel L. Meier, Vinodh Chandrasekaran, H. Preston Davis, Adam Payne, Xiaoyan Wang, Vijay Yelundur, Jon E. O’Neill, Young‐Woo Ok, Francesco Zimbardi, A. Rohatgi

IEEE Journal of Photovoltaics · 2011 · 36 citations · 28 references

Concepts

Abstract

Ion-implanted, screen-printed, high-efficiency, stable, n-base silicon solar cells fabricated from readily available 156-mm pseudosquare Czochralski wafers are described, along with prototype modules assembled from such cells. Two approaches are presented. The first approach, which involves a single phosphorus implant, has been used to produce cells (239 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) having a tight distribution of J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> , V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> , and fill factor over a wide range of wafer resistivity (factor of 10), with Fraunhofer-certified efficiencies up to 18.5%. In spite of the full screen-printed and alloyed Al back, a method has been developed to solder such cells in a module. The second approach, which involves implanting both phosphorus for back-surface field (BSF) and boron for front emitter, has been used to produce n-base cells having local back contacts and dielectric (SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) surface passivation. Efficiencies up to 19.1%, certified by Fraunhofer, have been realized on 239-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> cells. A method is also presented to express recombination activity in the cell base as a component of total reverse saturation current density. This allows recombination activity in all three regions of the cell (n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> region and its surface, n-base, and p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> region and its surface) to be compared as components of the total cell J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> to aid in maximizing V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> .

References

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