Atom probe tomography quantification of carbon in silicon

A systematic analysis of defects in ion-implanted silicon

K. S. Jones, S.G. Prussin, E. R. Weber · Applied Physics A · 1988 · 506 citations

Engineering, Materials Science, Electronic Materials +13

The post-ionization of field evaporated ions: A theoretical explanation of multiple charge states

David R. Kingham · Surface Science · 1982 · 386 citations

Natural Sciences, Chemistry, Physics +8

A procedure for quantification of precipitate microstructures from three-dimensional atom probe data

D. Vaumousse, A. Cerezo, P.J. Warren · Ultramicroscopy · 2003 · 366 citations

Natural Sciences, Materials Engineering, Materials Science +10

Multiple hit readout of a microchannel plate detector with a three-layer delay-line anode

O. Jagutzki, A. Cerezo, A. Czasch et al. · IEEE Transactions on Nuclear Science · 2002 · 358 citations

Engineering, Electrical Engineering, Instrumentation +13

Quantitative atom probe analysis of carbides

Mattias Thuvander, Jonathan Weidow, Jenny Angseryd et al. · Ultramicroscopy · 2010 · 191 citations

Natural Sciences, Chemistry, Materials Science +5