Publication | Closed Access
Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs
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Citations
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References
2020
Year
Si0.2ge0.8/ge MultilayerElectrical EngineeringEngineeringMicrofabricationNanoelectronicsSelective Wet EtchingApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsPlasma EtchingSemiconductor Device
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