Publication | Open Access
Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
34
Citations
30
References
2020
Year
EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsFlexible Gesn Metal–semiconductor–metalElectronic DevicesPhotodetectorsOptical PropertiesMechanical BendingCompound SemiconductorMaterials ScienceElectrical EngineeringPhotoluminescenceOptoelectronic PropertiesOptoelectronic MaterialsMechanical StrainPhotoelectric MeasurementFlexible ElectronicsApplied PhysicsLight AbsorptionOptoelectronics
We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties.
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