GaN Silicon-on-Insulator (SOI) N-Channel FinFET for High-Performance Low Power Applications

Abstract

A novel GaN (Gallium Nitride) SOI (Silicon-on-Insulator) FinFET (GaN-SOI FinFET) is proposed in this work using TCAD. All the results of the proposed device with 8 nm gate length are compared with bulk GaN FinFET and conventional silicon FinFET. At ultra-low voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 0.1 V) power supply, GaN-SOI FinFET device enhances (by four times) ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) thereby subthreshold slope, transconductance, surface potential, and switching performance of the device. Thus, the enhanced electrical performance of GaN-SOI FinFET improves the device efficiency and makes it suitable candidate for highperformance CMOS circuits with ultra-low power.