6.1 A 112Gb/s PAM-4 Long-Reach Wireline Transceiver Using a 36-Way Time-Interleaved SAR-ADC and Inverter-Based RX Analog Front-End in 7nm FinFET

Abstract

Interest in 112Gb/s wireline transceivers targeting data center and communication applications has rapidly increased. PAM-4 signaling remains the dominant choice of modulation scheme due to its superior spectral efficiency [1-2]. This paper reports a long-reach-capable 112Gb/s PAM-4 transceiver designed in 7nm FinFET. Figure 6.1.1 illustrates the top-level block diagram of the transceiver, comprised of a shared LC-PLL, a transceiver channel, and a control block. The control block sends 875MHz 128b-wide TX data and receives 778MHz 144b-wide RX data to and from transceiver channels and calculates the PRBS bit error rate (BER). The LC-PLL synthesizes a 14GHz differential clock from a 583.33MHz external reference clock. The PLL output clock is then delivered to each channel via supply-regulated CMOS high-speed clock distribution buffers. TX architecture shown in Fig. 6.1.1 adopts a 4-tap FFE and a quarter-rate clocking scheme with duty cycle and I/Q mismatch calibration to enable the use of a power-efficient CMOS 4:1 MUX [4]. The I/Q error is sensed by replica MUXs and background calibrated with a 100fs resolution. Pad driver topology [4-5] is chosen to achieve 3% FIR resolution without an excessive power penalty from the large number of unit cells as would be required in a voltage-mode driver. A distributed inductor peaking network is designed to compensate for >200fF device and parasitic capacitance at the current summing node. A series inductor and a T-coil provide isolation between ESD diodes, C4 bump pad and on-die termination (ODT) resistors to effectively form a broadband lumped transmission line.