Modelling and characterization on wafer to wafer hybrid bonding technology for 3D IC packaging

Abstract

For Wafer to Wafer Hybrid Bonding (W2W-HB) technology, warpage mitigation and precise Cu to Cu bonding are required to ensure a robust bonding integrity. This paper documents a numerical methodology using the Finite Element Analysis (FEA) tool to investigate the impact of various design and process parameters on two-layer wafer to wafer bonding. The risk of poor bonding integrity associated with inappropriate design and process parameters selected are discussed. The attempt of this paper is to promote a better understanding on the design and process parameters which could be used to establish guidelines for W2W-HB processes.