Highly Efficient and Stable GABr‐Modified Ideal‐Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small <i>V</i>_oc Deficit of 0.33 V

Abstract

Abstract 1.5–1.6 eV bandgap Pb‐based perovskite solar cells (PSCs) with 30–31% theoretical efficiency limit by the Shockley–Queisser model achieve 21–24% power conversion efficiencies (PCEs). However, the best PCEs of reported ideal‐bandgap (1.3–1.4 eV) Sn–Pb PSCs with a higher 33% theoretical efficiency limit are &lt;18%, mainly because of their large open‐circuit voltage ( V oc ) deficits (&gt;0.4 V). Herein, it is found that the addition of guanidinium bromide (GABr) can significantly improve the structural and photoelectric characteristics of ideal‐bandgap (≈1.34 eV) Sn–Pb perovskite films. GABr introduced in the perovskite films can efficiently reduce the high defect density caused by Sn 2+ oxidation in the perovskite, which is favorable for facilitating hole transport, decreasing charge‐carrier recombination, and reducing the V oc deficit. Therefore, the best PCE of 20.63% with a certificated efficiency of 19.8% is achieved in 1.35 eV PSCs, along with a record small V oc deficit of 0.33 V, which is the highest PCE among all values reported to date for ideal‐bandgap Sn–Pb PSCs. Moreover, the GABr‐modified PSCs exhibit significantly improved environmental and thermal stability. This work represents a noteworthy step toward the fabrication of efficient and stable ideal‐bandgap PSCs.