Physical Review Letters · 1976 · 66 citations · 10 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous MaterialsAmorphous SemiconductorsMagnetism In SolidsOptical Properties Of SemiconductorsSemiconductor PhysicsAmorphous Chalcogenide SemiconductorsAmorphous ChalcogenidesElectronic Density Of StatesElectronic Structure Of Amorphous MaterialsLocalized StatesParamagnetic CentersSpin Dynamics In Semiconductors
In addition to the previously reported paramagnetic hole center localized on the chalcogen, a conjugate optically induced electron center localized on an As atom is observed in glassy ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ and ${\mathrm{As}}_{2}$${\mathrm{Se}}_{3}$. The chalcogen center is further identified as a hole localized in a nonbonding $p$ orbital. These optically induced centers are unique to the amorphous phase, and their density saturates at or below ${10}^{17}$ spins/${\mathrm{cm}}^{3}$.
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Model for the Electronic Structure of Amorphous Semiconductors
P. W. Anderson · Physical Review Letters · 1975 · 1.5K citations
States in the Gap in Glassy Semiconductors
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The structure of inorganic radicals
H.W.W. · Journal of Molecular Structure · 1972 · 402 citations