Concepedia

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

Yuan Li, Zhiheng Xing, Yulin Zheng, Xin Tang, Wentong Xie, Xiaofeng Chen, Wenliang Wang, Guoqiang Li

Journal of Materials Chemistry C · 2019 · 44 citations · 28 references

DOI

Concepts

Abstract

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

References

28

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