Recent progress of spintronics based on emerging 2D materials: CrI₃ and Xenes

Abstract

Spintronics addresses the spin degree of freedom of electrons as an analog of the traditional information technology approach toward the charge degree of freedom. Two-dimensional (2D) materials have provided a new platform for spintronics since the successful isolation of graphene in 2004. In this review, we discuss the recent progress of chromium tri-iodide (CrI3), phosphorene, silicene, germanene, stanene, animonene, and borophene in spintronics. Among these 2D materials, CrI3 has intrinsic magnetism, while the others are single-element 2D materials (Xenes) without intrinsic magnetism. A review is presented of works based on different research methods, including experimental, theoretical, and simulation studies. Various morphologies of 2D materials are included, such as monolayers, bilayers, nanoribbons, heterojunctions, and nanoflakes of different shapes. The effect of atomic doping, vacancies, line defects, strain, and external fields is also summarized. Among the properties and applications of these materials, the spin polarization, spin/valley-dependent resistance, various Hall effects, RKKY interaction, Rashba effect, and topological phase are the most widely studied topics. Over the past two years, various novel spintronics devices have been designed based on 2D materials, and numerous fundamental functions in spintronics have been realized. Thus, we also summarize the emerging novel devices in this field. Finally, we present a summary of the remaining challenges and possible future directions.