All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

M. Farahmand, C. Garetto, E. Bellotti et al. · IEEE Transactions on Electron Devices · 2001 · 484 citations

Natural Sciences, Materials Science, Physics +17

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Y. Dora, A. Chakraborty, L. McCarthy et al. · IEEE Electron Device Letters · 2006 · 434 citations

Engineering, Electrical Engineering, Materials Science +17

Physical limitations on frequency and power parameters of transistors

E. O. Johnson · IRE International Convention Record · 2005 · 432 citations

Engineering, Electrical Engineering, Microelectronics +16

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Letters · 2008 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

An AlN/Al0.85Ga0.15N high electron mobility transistor

Albert G. Baca, Andrew Armstrong, Andrew A. Allerman et al. · Applied Physics Letters · 2016 · 144 citations · Full text

Engineering, Electrical Engineering, Materials Science +17