Publication | Open Access
All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
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Citations
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References
2019
Year
Aluminium NitrideElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideOhmic ContactsAl0.7ga0.3n/al0.5ga0.5n Hfet
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