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Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching

Materials ScienceIi-vi SemiconductorEngineeringNanoelectronicsOxide ElectronicsResistive SwitchingApplied PhysicsOxygen Vacancies DistributionGallium OxideSemiconductor MaterialBilayer Zno/zro2 StructureTopological Heterostructures