Sobia Ali Khan

Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching

Muhammad Ismail, Mehr Khalid Rahmani, Sobia Ali Khan et al. · Applied Surface Science · 2019 · 67 citations

Materials Science, Ii-vi Semiconductor, Engineering +9

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata et al. · Nanomaterials · 2021 · 45 citations · Full text

Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features

Shania Rehman, Muhammad Farooq Khan, Mehr Khalid Rahmani et al. · Nanomaterials · 2020 · 37 citations · Full text

Polymer-based non-volatile resistive random-access memory device fabrication with multi-level switching and negative differential resistance state

Sobia Ali Khan, Mehr Khalid Rahmani, HyungWon Kim et al. · Organic Electronics · 2021 · 31 citations

Materials Science, Non-volatile Memory, Electrical Engineering +8

Fully solution-processed organic RRAM device with highly stable butterfly-shaped hysteresis

Mehr Khalid Rahmani, Sobia Ali Khan, Muhammad Farooq Khan et al. · Materials Science and Engineering B · 2022 · 28 citations

Materials Science, Engineering, Organic Electronics +6