Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

Interfacial phase-change memory

Robert E. Simpson, Paul Fons, Alexander V. Kolobov et al. · Nature Nanotechnology · 2011 · 758 citations

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Engineering, Electrical Engineering, Materials Science +17

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

J.G. Fossum · IEEE Transactions on Electron Devices · 1983 · 689 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

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Engineering, Computer Engineering, Electrical Engineering +14

A capacitor-less 1T-DRAM cell

S. Okhonin, M. Nagoga, Jean-Michel Sallèse et al. · IEEE Electron Device Letters · 2002 · 228 citations

Engineering, Computer Engineering, Electrical Engineering +13