Solution-Processed MoO_<i>x</i> Hole-Transport Layer with F4-TCNQ Modification for Efficient and Stable Inverted Perovskite Solar Cells

Abstract

Besides high quality perovskites, a precisely designed interface is always necessary to achieve top performance perovskite solar cells. However, this inevitably introduces complexity for fabrication, increases cost, and consequently hinders the commercialization. Thus, developing an efficient, easily processable, and inexpensive interface is critically important for commercialization of perovskite photovoltaics. In this work, via solution-processed MoOx HTL and F4-TCNQ modification, we demonstrated efficient and stable inverted MAPbI3 perovskite solar cells due to improved optoelectronic properties at the interface and perovskite. A champion PCE of 16.26% was achieved for the optimized device with negligible hysteresis. Equally important, huge improvement is also demonstrated for device stability by retaining over 95% of its initial PCE after 150 h in ambient conditions (relative humidity ∼ 45%) and 95% after 40 h in operational situations under continuous AM 1.5G illumination. Our work highlights that efficient and stable perovskite solar cells can be accomplished with an easily processable and inexpensive inorganic interlayer and provides referential strategy and methodology for this target, which would be beneficial for the commercialization of PSC technology.