Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm

Abstract

We have proposed novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency Δ/I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C0</sub> by a factor of 1.5-2 compared with conventional double-interface MTJ technology. We successfully fabricated the quad-interface MTJ using 300mm process based on novel low damage integration process including PVD, RIE and so on [1]. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ/I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C0</sub> . Moreover, we have achieved about two times larger TMR ratio/RA by the stack development specific for the quad-interface MTJ technology. The developed quad-interface MTJ technology regarded as post-double-interface MTJ technology will become an essential technology for the scaling of the STT-MRAM beyond 20nm.