SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit

Abstract

This work presents experimental validation of novel device design, based on charge-balance concept expected to expand SiC utilization space for industrial and transportation power conversion applications. Fabricated 2kV and 3kV SiC CB-JBS diodes have surpassed the 1-D BV versus R On,sp tradeoff with the highest reported breakdown voltage. Static and dynamic characteristics of these new diodes are reported.