3kV SiC Charge-Balanced Diodes Breaking Unipolar Limit

Abstract

In this work, we report design and fabrication of 3kV SiC Charge-Balanced JBS diodes with differential on-resistance below SiC 1D-unipolar limit. This diode implements a novel drift layer architecture that comprises p-doped buried Charge-Balanced regions inside drift layer. We also report successful high voltage double pulse inductive switching of SiC CB-JBS diode with total estimated recovery loss of 12.5mJ/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 150 °C when switched between 1.7kV and 270A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .