Superior Switching Characteristics of SiC-MOSFET Embedding SBD

Abstract

Superior switching characteristics of SiC-MOSFET embedding SBD is demonstrated compared with conventional MOSFET and MOSFET with external SBD. Inactivation of parasitic body diode by embedding SBD enables a suppression of recovery charge during turn-on process, which results in a reduction of turn-on loss. Furthermore, elimination of external SBD reduces total chip size, or output capacitance charge, which results in a reduction of output capacitance loss.