Advanced Functional Materials · 2019 · 31 citations · 45 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsSemiconductor MaterialsDopingNanocompositesSemiconductor NanomaterialsSinteringThermal Properties Of SemiconductorsThermoelectric MaterialsBand OffsetsConduction BandEutectoid TransformationPercolationSelective DopingSpark Plasma SinteringThermoelectric Figure Of MeritThermoelectric Properties
Abstract A β‐FeSi 2 –SiGe nanocomposite is synthesized via a react/transform spark plasma sintering technique, in which eutectoid phase transformation, Ge alloying, selective doping, and sintering are completed in a single process, resulting in a greatly reduced process time and thermal budget. Hierarchical structuring of the SiGe secondary phase to achieve coexistence of a percolated network with isolated nanoscale inclusions effectively decouples the thermal and electrical transport. Combined with selective doping that reduces conduction band offsets, the percolation strategy produces overall electron mobilities 30 times higher than those of similar materials produced using typical powder‐processing routes. As a result, a maximum thermoelectric figure of merit ZT of ≈0.7 at 700 °C is achieved in the β‐FeSi 2 –SiGe nanocomposite.
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Generalized Gradient Approximation Made Simple
John P. Perdew, Kieron Burke, Matthias Ernzerhof · Physical Review Letters · 1996 · 211.5K citations · Full text
Natural Sciences, Chemistry, Physics +16
High-performance bulk thermoelectrics with all-scale hierarchical architectures
Kanishka Biswas, Jiaqing He, Ivan Blum et al. · Nature · 2012 · 4.6K citations