Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier

A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches

Roy G. Gordon, Dennis M. Hausmann, E. Kim et al. · Chemical Vapor Deposition · 2003 · 390 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Detection limits in XPS for more than 6000 binary systems using Al and Mg Kα X‐rays

Alexander G. Shard · Surface and Interface Analysis · 2014 · 288 citations

Natural Sciences, Chemistry, Materials Science +15

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

Harm C. M. Knoops, E. Langereis, M. C. M. van de Sanden et al. · Journal of The Electrochemical Society · 2010 · 192 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +13

Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor

Jill Becker, Seigi Suh, Shenglong Wang et al. · Chemistry of Materials · 2003 · 147 citations

Natural Sciences, Materials Engineering, Materials Science +16

Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(<i>tert</i>-butylimido)bis(dimethylamido)tungsten and ammonia

Jill Becker, Roy G. Gordon · Applied Physics Letters · 2003 · 147 citations

Natural Sciences, Materials Engineering, Materials Science +17