Automatic Extraction Methodology for Accurate Measurements of Effective Channel Length on 65-nm MOSFET Technology and Below

Abstract

The length of MOSFET channels is an important circuit design parameter, and this paper focuses on a new industrially-compatible technique using gate-to-channel measurements C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gc</sub> (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> ) to provide accurate extraction of the channel length. Thanks to fully-automatic probers, the technique provides large scale extractions and so, statistical-based results can be extracted with a maximized reliability. An in-depth study of parasitic capacitances has been performed to improve the extraction accuracy to within a few nanometers.